VT1060C-E3, vft1060c-e3 vb t1060c-e3, vit1060c-e3 www.vishay.com vishay general semiconductor revision: 14-dec-16 1 document number: 89131 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.39 v at i f = 2.5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-220ab, ito-220ab, to-263ab and to-262aa molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? ? ? ? ? ? ? primary characteristics i f(av) 2 x 5 a v rrm 60 v i fsm 100 a v f at i f = 5.0 a 0.50 v t j max. 150 c package to-220ab, ito-220ab, to-263ab, to-262aa diode variations common cathode to-220ab 1 2 3 1 k 2 3 to-263ab 1 2 k to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 k heatsink pin 1 pin 2 pin 3 pin 1 pin 2 case pin 3 tmbs ? ito-220ab 1 2 3 vt1060c vft1060c vit1060c vbt1060c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt1060c vft1060c vbt1060c vit1060c unit maximum repetitive pe ak reverse voltage v rrm 60 v maximum average forward rectified current (fig. 1) per device i f(av) 10 a per diode 5 peak forward surge current 8. 3 ms single half sine-wave superimposed on ra ted load per diode i fsm 100 non-repetitive avalanche energy at t j = 25 c, l = 60 mh e as 65 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c i rrm 1.0 a isolation voltage (ito-220ab only) fr om terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg -55 to +150 c
VT1060C-E3, vft1060c-e3 vb t1060c-e3, vit1060c-e3 www.vishay.com vishay general semiconductor revision: 14-dec-16 2 document number: 89131 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode (1) i f = 2.5 a t a = 25 c v f 0.49 - v i f = 5.0 a 0.58 0.70 i f = 2.5 a t a = 125 c 0.39 - i f = 5.0 a 0.50 0.60 reverse current per diode (2) v r = 60 v t a = 25 c i r - 700 a t a = 125 c 6.9 25 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt1060c vft1060c vbt1060c vit1060c unit typical thermal resistance per diode r ? jc 3.5 6.5 3.5 3.5 c/w per device 2.5 5.0 2.5 2.5 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab VT1060C-E3/4w 1.87 4w 50/tube tube ito-220ab vft1060c-e3/4w 1.75 4w 50/tube tube to-263ab vbt1060c-e3/4w 1.39 4w 50/tube tube to-263ab vbt1060ce3/8w 1.39 8w 800/reel tape and reel to-262aa vit1060c-e3/4w 1.45 4w 50/tube tube
VT1060C-E3, vft1060c-e3 vb t1060c-e3, vit1060c-e3 www.vishay.com vishay general semiconductor revision: 14-dec-16 3 document number: 89131 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical transient thermal impedance per diode fig. 6 - typical junction capacitance per diode case temperat u re (c) a v erage for w ard rectified c u rrent (a) 12 4 0 25 50 75 100 125 vft1060c mo u nted on specific heatsink 2 10 8 6 0 150 v(b,i)t1060c 0 1.0 2.0 3.0 4.0 06 a v erage for w ard c u rrent (a) a v erage po w er disspation (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 1.5 2.5 3.5 d = t p /t t p t 5 4 3 2 1 d = 1.0 0.5 instantaneo u s for w ard voltage (v) 0 0.2 0.4 0.8 1.2 1.4 100 10 0.1 0.001 t a = 100 c t a = 25 c 0.6 1.0 t a = 150 c t a = 125 c instantaneo u s for w ard c u rrent (a) 1 0.01 20 30 40 50 60 70 80 90 100 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 1 0.1 0.01 0.001 100 10 10 1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/w) v(b,i)t1060c j u nction to case vft1060c 1000 10 000 0.1 1 10 100 re v erse voltage (v) j u nction capaci tance (pf) 10 100
VT1060C-E3, vft1060c-e3 vb t1060c-e3, vit1060c-e3 www.vishay.com vishay general semiconductor revision: 14-dec-16 4 document number: 89131 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.415 (10.54) 0.380 (9.65) 0.635 (16.13) 0.625 (15.87) pin 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.161 (4.08) 0.139 (3.53) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pin 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.057 (1.45) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
VT1060C-E3, vft1060c-e3 vb t1060c-e3, vit1060c-e3 www.vishay.com vishay general semiconductor revision: 14-dec-16 5 document number: 89131 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-262aa 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pin 0.411 (10.45) 0.380 (9.65) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) 0.380 (9.65) 0.41 1 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591(15.00) 0.624 (15.85) 1 2 0.245 (6.22) mi n k k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.110 (2.79) 0.090 (2.29) 0.047 (1.19) 0.055 (1.40) 0 to 0.01 (0 to 0.254) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) to-263ab 0.105 (2.67) 0.08 (0.095) (2.41) (2.032) 0.42 (10.66) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) 0.33 (8.38) mounting pad layout mi n . mi n . mi n . mi n .
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